摘要： Stressed C–V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high‐voltage off‐state stress. The C–V measurement results also correlated with the degradation in dynamic on‐resistance (RDS,on) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic RDS,on degradation, the location with high electric field that determines the major degradation is determined. Finally, a new source field plate is proposed and demonstrated to improve the dynamic performance degradation. 其他題名： Phys. Status Solidi A 出版者： Weinheim: Blackwell Publishing Ltd 出版日期： 2015-05 出處： Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1099-1103 資源來源： Wiley Online Library eJournals 版權： 2015 WILEY−VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201431643
