摘要： A light-emitting device consisting of a two-dimensional regularly patterned InGaN/GaN quantum well (QW) nanorod (NR) light-emitting diode (LED) array is implemented and characterized. The NR p-i-n structure includes n-GaN NR core and essentially conformal p-GaN shell. The active regions include nonpolar sidewall QWs and polar top-face QWs. A conformal layer of transparent GaZnO of low resistivity is deposited onto the NR LED structure for spreading the injection current over the sidewalls. It is found that the blue-shift range of the output spectral peak in increasing injection current is smaller than that of a planar LED of about the same operation wavelength in a similar variation range of injection current density although it is nonzero. The small blue-shift range is attributed to the mixed emission contributions from the nonpolar sidewall QWs and polar top-face QWs. 其他題名： Opt Lett 出版者： United States 出版日期： 2013-09-01 出處： Optics letters, 2013-09, Vol.38 (17), p.3370-3373 資源來源： Optica Publishing Group Journals 識別號： ISSN: 0146-9592 識別號： ISSN: 1539-4794 識別號： EISSN: 1539-4794 識別號： DOI: 10.1364/OL.38.003370 識別號： PMID: 23988960
