Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： Two sets of light-emitting diodes (LEDs) based on two epitaxial structures of different p-GaN layer thicknesses for demonstrating the effects of localized surface plasmon (LSP) coupling with the quantum wells (QWs) in the LEDs are compared. In the first set based on the epitaxial structure of thick p-GaN, to reduce the distance between the Ag nanoparticles (NPs) and QWs for increasing the LSP coupling strength, Ag NPs are filled into a hole array fabricated on the p-GaN layer. In the second set based on the epitaxial structure of thin p-GaN, Ag NPs are fabricated on the top surface of the p-GaN layer. The LSP-coupled LEDs show the significant enhancements of internal quantum efficiency and LED output intensity even though the coverage of the transparent conductor, GaZnO, red-shifts the LSP resonance peak such that the LSP resonance at the QW emission wavelength becomes weaker. 其他題名： LPT 出版者： New York: IEEE 出版日期： 2014-09-01 出處： IEEE photonics technology letters, 2014-09, Vol.26 (17), p.1699-1702 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2014 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2014.2330871 識別號： CODEN: IPTLEL
