Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107703

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Title:	Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy
Authors:	綦振瀛;Chen, Cheng-Yu;Hsiao, Li-Han;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	A1. Doping;A3. Molecular beam epitaxy;B1. Oxides;B2. Semiconducting II–VI materials;Compensation;Crystal defects;Crystal growth;Deposition;Electrical resistivity;Molecular beam epitaxy;Spectra;Zinc oxide
Date:	2015-07-28
Issue Date:	2026-04-23 14:21:45 (UTC+8)
Publisher:	Elsevier;Elsevier B.V
Abstract:	摘要： In this study, Ga-doped ZnO (GZO) thin films were deposited on GaN templates by using plasma-assisted molecular beam epitaxy. To obtain low resistivity GZO films, in-situ post-annealing under Zn overpressure was carried out to avoid the generation of acceptor-liked Zn vacancies. The resultant films showed optical transparency over 95% in the visible spectral range. By reducing the acceptor-like defects, GZO films with compensation ratio near 0.4 and resistivity simultaneously lower than 1×10−4Ωcm have been successfully demonstrated. •In-situ post-growth annealing under Zn overpressure was first demonstrated to reduce the resistivity of the GZO films by minimizing the concentration of acceptor-like Zn vacancy caused by thermal desorption of Zn atoms.•A minimal resistivity of 9×10−5Ωcm is achieved on the GZO films grown at 300°C.•We have successfully demonstrated GZO films with compensation ratio below 0.4 and resistivity near 1×10−4Ωcm, simultaneously. 出版者： Elsevier B.V 出版日期： 2015-09-01 出處： Journal of crystal growth, 2015-09, Vol.425, p.216-220 版權： 2015 Elsevier B.V. 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2015.02.034
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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