MBE-grown CdZnO/ZnO multiple quantum-well light-emitting diode on MOCVD-grown p-type GaN

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107727

Title:	MBE-grown CdZnO/ZnO multiple quantum-well light-emitting diode on MOCVD-grown p-type GaN
Authors:	姚毓峰;Ting, Shao-Ying;Chen, Horng-Shyang;Chang, Wen-Ming;Huang, Jeng-Jie;Liao, Che-Hao;Chen, Chih-Yen;Hsieh, Chieh;Yao, Yu-Feng;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, Chih-Chung
Contributors:	資訊電機學院電機工程學系
Keywords:	CdZnO/ZnO quantum well;Chemical vapor deposition;Gallium nitride;Light emitting diodes;light-emitting diode;Molecular beam epitaxial growth;p-GaN;Plasma temperature;Scanning electron microscopy;Zinc oxide
Date:	2012-05-08
Issue Date:	2026-04-23 14:23:00 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： A CdZnO/n-ZnO multiple-quantum-well (QW) light-emitting diode (LED), with the QWs and n + -ZnO capping layer grown with molecular beam epitaxy on p-GaN, which is grown with metal-organic chemical vapor deposition, is fabricated and characterized. Because of the weak carrier localization mechanism in the ZnO-based LED, its defect emission is quite strong and dominates the LED output when injection current is low. The blue shift of the LED output spectrum in applying a forward-biased voltage and the large blue-shift range in increasing injection current show the different behaviors of such a ZnO-based LED from those of a nitride LED. 其他題名： LPT 出版者： IEEE 出版日期： 2012-06-01 出處： IEEE photonics technology letters, 2012-06, Vol.24 (11), p.909-911 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2190397 識別號： CODEN: IPTLEL
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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