Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

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Title:	Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
Authors:	綦振瀛;Liao, Yu-An;Chao, Yi-Kai;Chang, Shu-Wei;Chang, Wen-Hao;Chyi, Jen-Inn;Lin, Shih-Yen
Contributors:	資訊電機學院電機工程學系
Date:	2013-09-30
Issue Date:	2026-04-23 14:23:22 (UTC+8)
Publisher:	American Institute of Physics
Abstract:	摘要： We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications. 出版日期： 2013-09-30 出處： Applied physics letters, 2013-09, Vol.103 (14) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4824067
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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