摘要： We propose and demonstrate a new method for evaluating the afterpulsing effect in single-photon avalanche photodiodes (SPADs). By analyzing the statistical property of dark count rate, we can quantitatively characterize afterpulsing probability (APP) of a SPAD. In experiment, the temperature-dependent low dark count rate (DCR) distribution becomes non-Poissonian at lower temperature and has higher excess bias as the afterpulsing effect becomes significant. Our work provides a flexible way to examine APP in either single-device or circuit level. 其他題名： Opt Lett 出版者： United States 出版日期： 2015-08-15 出處： Optics letters, 2015-08, Vol.40 (16), p.3774-3777 資源來源： Optica Publishing Group Journals 識別號： ISSN: 0146-9592 識別號： ISSN: 1539-4794 識別號： EISSN: 1539-4794 識別號： DOI: 10.1364/OL.40.003774 識別號： PMID: 26274657
