Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107825

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Title:	Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode
Authors:	姚毓峰;Yao, Yu-Feng;Lin, Chun-Han;Hsieh, Chieh;Su, Chia-Ying;Zhu, Erwin;Yang, Shaobo;Weng, Chi-Ming;Su, Ming-Yen;Tsai, Meng-Che;Wu, Shang-Syuan;Chen, Sheng-Hung;Tu, Charng-Gan;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, C. C.
Contributors:	資訊電機學院電機工程學系
Date:	2015-12-14
Issue Date:	2026-04-23 14:26:44 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength. 其他題名： Opt Express 出版者： United States 出版日期： 2015-12-14 出處： Optics express, 2015-12, Vol.23 (25), p.32274-32288 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.23.032274 識別號： PMID: 26699018
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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