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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/107843


    題名: Multi-section core-shell InGaN/GaN quantumwell nanorod light-emitting diode array
    作者: 姚毓峰;Tu, Charng-Gan;Yao, Yu-Feng;Liao, Che-Hao;Su, Chia-Ying;Hsieh, Chieh;Weng, Chi-Ming;Lin, Chun-Han;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, C. C.
    貢獻者: 資訊電機學院電機工程學系
    日期: 2015-08-24
    上傳時間: 2026-04-23 14:27:00 (UTC+8)
    出版者: The Optical Society;United States: Optica Publishing Group
    摘要: 摘要: The growth of a two-section, core-shell, InGaN/GaN quantum-well (QW) nanorod- (NR-) array light-emitting diode device based on a pulsed growth technique with metalorganic chemical vapor deposition is demonstrated. A two-section n-GaN NR is grown through a tapering process for forming two uniform NR sections of different cross-sectional sizes. The cathodoluminescence (CL), photoluminescence (PL), and electrolumines-cence (EL) characterization results of the two-section NR structure are compared with those of a single-section NR sample, which is prepared under the similar condition to that for the first uniform NR section of the two-section sample. All the CL, PL, and EL spectra of the two-section sample (peaked between 520 and 525 nm) are red-shifted from those of the single-section sample (peaked around 490 nm) by >30 nm in wavelength. Also, the emitted spectral widths of the two-section sample become significantly larger than their counterparts of the single-section sample. The PL spectral full-width at half-maximum increases from ~37 to ~61 nm. Such variations are attributed to the higher indium incorporation in the sidewall QWs of the two-section sample due to the stronger strain relaxation in an NR section of a smaller cross-sectional size and the more constituent atom supply from the larger gap volume between neighboring NRs.
    其他題名: Opt Express
    出版者: United States: Optica Publishing Group
    出版日期: 2015-08-24
    出處: Optics Express, 2015-08, Vol.23 (17), p.21919-
    資源來源: Optica
    識別號: ISSN: 1094-4087
    識別號: EISSN: 1094-4087
    識別號: DOI: 10.1364/oe.23.021919
    識別號: PMID: 26368168
    顯示於類別:[電機工程學系] 期刊論文

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