Observing the evolution of graphene layers at high current density

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/107906

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/107906

Title:	Observing the evolution of graphene layers at high current density
Authors:	辛正倫;Huang, Chun-Wei;Chen, Jui-Yuan;Chiu, Chung-Hua;Hsin, Cheng-Lun;Tseng, Tseung-Yuen;Wu, Wen-Wei
Contributors:	資訊電機學院電機工程學系
Keywords:	Atomic/Molecular Structure and Spectra;Biomedicine;Biotechnology;Breakdown;Carrying capacity;Chemistry and Materials Science;Condensed Matter Physics;Current density;Devices;Electric fields;Electronics;Evolution;Graphene;Materials Science;Nanostructure;Nanotechnology;Nanotubes;Ostwald ripening;Ostwald熟化;Physical properties;Research Article;Surface diffusion;击穿机理;形态演变;物理性质;电场作用;石墨;透射电子显微镜;高电流密度
Date:	2016-12-01
Issue Date:	2026-04-23 14:28:15 (UTC+8)
Publisher:	Tsinghua University Press;Beijing: Tsinghua University Press
Abstract:	摘要： Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope （TEM）. The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be -1.6 × 10^9 A.cm-2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening （OR）, indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path. 其他題名： Nano Res 其他題名： Nano Research 出版者： Beijing: Tsinghua University Press 出版日期： 2016-12-01 出處： Nano research, 2016-12, Vol.9 (12), p.3663-3670 版權： Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016 版權： Nano Research is a copyright of Springer, (2016). All Rights Reserved. 識別號： ISSN: 1998-0124 識別號： EISSN: 1998-0000 識別號： DOI: 10.1007/s12274-016-1237-0
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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