摘要： ZnSeO alloys with O composition to 11.5% were grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The absorption coefficients, α(ℏω), determined from the transmittance measurements are higher than 1×104cm−1 for these ZnSeO thin films and manifest themselves very suitable for photovoltaic devices. The absorption coefficient following the square law of photon energy indicated that the ZnSeO has a direct band gap. Based on the quadratic band gap function, a bowing parameter of 6.9eV was obtained. Cl doping in ZnSeO films grown on GaAs substrates were first demonstrated with carrier electron concentration varying from 1.2×1017cm−3 to 5.4×1018cm−3 with 2.2% oxygen content. The activation energy of 123meV for Cl dopant in ZnSeO was also deduced from temperature dependent Hall measurements. ► ZnSeO with 11.5% oxygen content with a band gap of 2.05eV was first achieved. ► The absorption coefficient was found higher than 1×104cm−1 for ZnSeO films. ► ZnSeO has a direct band gap. ► A bowing parameter of 6.9eV was obtained for ZnSeO alloys. ► The n-type ZnSeO films with controllable concentrations were first demonstrated. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-09-01 出處： Journal of Crystal Growth, 2013-09, Vol.378, p.180-183 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2012.12.161 識別號： CODEN: JCRGAE
