Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy

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題名:	Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy
作者:	綦振瀛;Chen, Cheng-Yu;Yang, Cheng-Yu;Chyi, Jen-Inn;Wu, Chih-Hung
貢獻者:	資訊電機學院電機工程學系
關鍵詞:	A1. Characterization;A3. Molecular beam epitaxy;Absorption coefficient;Alloys;Applied sciences;B1. Oxides;B1. Zinc compounds;B2. Semiconducting II–VI materials;Carrier density;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Conductivity phenomena in semiconductors and insulators;Cross-disciplinary physics: materials science;rheology;Devices;Doping;Electronic transport in condensed matter;Energy;Exact sciences and technology;Gallium arsenide;Gallium arsenides;Galvanomagnetic and other magnetotransport effects;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Molecular beam epitaxy;Molecular, atomic, ion, and chemical beam epitaxy;Natural energy;Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation;Optical properties of bulk materials and thin films;Photovoltaic conversion;Physics;Solar cells. Photoelectrochemical cells;Solar energy
日期:	2013-01-01
上傳時間:	2026-04-23 14:28:35 (UTC+8)
出版者:	Elsevier;Amsterdam: Elsevier B.V
摘要:	摘要： ZnSeO alloys with O composition to 11.5% were grown on sapphire substrates by plasma-assisted molecular beam epitaxy. The absorption coefficients, α(ℏω), determined from the transmittance measurements are higher than 1×104cm−1 for these ZnSeO thin films and manifest themselves very suitable for photovoltaic devices. The absorption coefficient following the square law of photon energy indicated that the ZnSeO has a direct band gap. Based on the quadratic band gap function, a bowing parameter of 6.9eV was obtained. Cl doping in ZnSeO films grown on GaAs substrates were first demonstrated with carrier electron concentration varying from 1.2×1017cm−3 to 5.4×1018cm−3 with 2.2% oxygen content. The activation energy of 123meV for Cl dopant in ZnSeO was also deduced from temperature dependent Hall measurements. ► ZnSeO with 11.5% oxygen content with a band gap of 2.05eV was first achieved. ► The absorption coefficient was found higher than 1×104cm−1 for ZnSeO films. ► ZnSeO has a direct band gap. ► A bowing parameter of 6.9eV was obtained for ZnSeO alloys. ► The n-type ZnSeO films with controllable concentrations were first demonstrated. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-09-01 出處： Journal of Crystal Growth, 2013-09, Vol.378, p.180-183 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2012.12.161 識別號： CODEN: JCRGAE
顯示於類別:	[電機工程學系] 期刊論文

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