American Institute of Physics;Melville: AIP Publishing
摘要:
摘要： Molecular beam epitaxy deposited rare-earth oxide of Y2O3 has effectively passivated GaSb, leading to low interfacial trap densities of (1–4) × 1012 cm−2 eV−1 across the energy bandgap of GaSb. A high saturation drain current density of 130 μA/μm, a peak transconductance of 90 μS/μm, a low subthreshold slope of 147 mV/decade, and a peak field-effect hole mobility of 200 cm2/V-s were obtained in 1 μm-gate-length self-aligned inversion-channel GaSb p-Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). In this work, high-κ/GaSb interfacial properties were better in samples with a high substrate temperature of 200 °C than in those with high κ's deposited at room temperature, in terms of the interfacial electrical properties, particularly, the reduction of interfacial trap densities near the conduction band and the MOSFET device performance. 出版者： Melville: AIP Publishing 出版日期： 2014-11-03 出處： Applied Physics Letters, 2014-11, Vol.105 (18) 資源來源： AIP Journals (American Institute of Physics) 版權： 2014 AIP Publishing LLC. 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4901100
