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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108131


    Title: Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array
    Authors: 姚毓峰;Tu, Charng-Gan;Liao, Che-Hao;Yao, Yu-Feng;Chen, Horng-Shyang;Lin, Chun-Han;Su, Chia-Ying;Shih, Pei-Ying;Chen, Wei-Han;Zhu, Erwin;Kiang, Yean-Woei;Yang, C. C.
    Contributors: 資訊電機學院電機工程學系
    Date: 2014-12-15
    Issue Date: 2026-04-23 14:36:59 (UTC+8)
    Publisher: The Optical Society;United States: Optica Publishing Group
    Abstract: 摘要: The growth and process of a regularly patterned nanorod (NR)- light-emitting diode (LED) array with its emission from sidewall non-polar quantum wells (QWs) are demonstrated. A pyramidal un-doped GaN structure is intentionally formed at the NR top for minimizing the current flow through this portion of the NR such that the injection current can be effectively guided to the sidewall m-plane InGaN/GaN QWs for emission excitation by a conformal transparent conductor (GaZnO). The injected current density at a given applied voltage of the NR LED device is similar to that of a planar c-plane or m-plane LED. The blue-shift trend of NR LED output spectrum with increasing injection current is caused by the non-uniform distributions of QW width and indium content along the height on a sidewall. The photoluminescence spectral shift under reversed bias confirms that the emission of the fabricated NR LED comes from non-polar QWs.
    其他題名: Opt Express
    出版者: United States: Optica Publishing Group
    出版日期: 2014-12-15
    出處: Optics Express, 2014-12, Vol.22 (S7), p.A1799-
    資源來源: Optica Publishing Group Journals
    識別號: ISSN: 1094-4087
    識別號: EISSN: 1094-4087
    識別號: DOI: 10.1364/oe.22.0a1799
    識別號: PMID: 25607494
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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