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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108169


    Title: Sb-based semiconductors for low power electronics
    Authors: 綦振瀛;Yeh, Nien-Tze;Chiu, Pei-Chin;Chyi, Jen-Inn;Ren, Fan;Pearton, Stephen J.
    Contributors: 資訊電機學院電機工程學系
    Keywords: Antimony;Electronic devices;Heterostructures;High speed;Indium antimonides;Indium arsenides;Intermetallics;Semiconductors
    Date: 2013-07-18
    Issue Date: 2026-04-23 14:37:42 (UTC+8)
    Publisher: Royal Society of Chemistry;Royal Society of Chemistry (RSC)
    Abstract: 摘要: Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.
    出版者: Royal Society of Chemistry (RSC)
    出版日期: 2013-01-01
    出處: Journal of Materials Chemistry C, 2013-01, Vol.1 (31), p.4616--4627
    資源來源: Royal Society of Chemistry
    識別號: ISSN: 2050-7526
    識別號: EISSN: 2050-7534
    識別號: DOI: 10.1039/c3tc30585f
    Appears in Collections:[Department of Electrical Engineering] journal & Dissertation

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