摘要： We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls. 出版者： Melville: American Institute of Physics 出版日期： 2015-10-01 出處： AIP advances, 2015-10, Vol.5 (10), p.107128-107128-5 資源來源： DOAJ Directory of Open Access Journals 版權： 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. 識別號： ISSN: 2158-3226 識別號： EISSN: 2158-3226 識別號： DOI: 10.1063/1.4934674
