Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108184

Title:	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process
Authors:	綦振瀛;Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.
Contributors:	資訊電機學院電機工程學系
Date:	2015-05-16
Issue Date:	2026-04-23 14:38:09 (UTC+8)
Publisher:	Elsevier;Elsevier BV
Abstract:	出版者： Elsevier BV 出版日期： 2015-11 出處： Microelectronic Engineering, 2015-11, Vol.147, p.330-334 識別號： ISSN: 0167-9317 識別號： DOI: 10.1016/j.mee.2015.04.098
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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