Shape control of nickel silicide nanocrystals on stress-modified surface

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108205

Title:	Shape control of nickel silicide nanocrystals on stress-modified surface
Authors:	辛正倫;Hsin, Cheng-Lun;Huang, Chun-Wei;Cheng, Chi-Hsuan;Teng, Hsu-Shen;Wu, Wen-Wei
Contributors:	資訊電機學院電機工程學系
Date:	2014-01-01
Issue Date:	2026-04-23 14:38:59 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： Regularly distributed dislocation networks with a controllable spacing have been formed by wafer bonding. Different kinds of Si bicrystals were fabricated by (001), (111) and (110) Si wafers bonded with (001) silicon-on-insulator (SOI). NiSi 2 formed on the bicrystal was found to be affected by the underlying dislocation arrays, confined by the dislocation grids while the surface stress and dislocation density is high enough. It has been demonstrated that through controlling the surface stress arrangement, the shape of the silicide nanostructures can be controlled and various nanostructures can be obtained. This study supports the fundamental understanding of the stress effect on the formation of silicide nanostructures on Si bicrystals and the shape-controlled nanosilicide could be useful for the growth of catalyst-assisted one-dimensional nanostructures. Different kinds of Si bicrystals have been fabricated by (001), (111) and (110) Si wafers bonded with (001) silicon-on-insulator. The shapes of nickel silicide nanoclusters formed on the bicrystals were found to be affected by the underlying dislocation arrays. 出版日期： 2014-02-03 資源來源： Royal Society of Chemistry 識別號： EISSN: 1466-8033 識別號： DOI: 10.1039/c3ce41882k
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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