Si/Ge avalanche photodiodes-based electrical comb-line generators and photoreceivers for very-fast impulse radio wireless linking

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Title:	Si/Ge avalanche photodiodes-based electrical comb-line generators and photoreceivers for very-fast impulse radio wireless linking
Authors:	許晉瑋;Shi, Jin-Wei;Kuo, Feng-Ming;Dai, Daoxin;Bowers, J. E.
Contributors:	資訊電機學院電機工程學系
Keywords:	Avalanche photodiodes (APD);Data communication;impulse radio (IR);Optical pulses;Photonics;Radio frequency;Resonant frequency;Silicon;ultra-wideband (UWB);Wireless communication
Date:	2012-05-22
Issue Date:	2026-04-23 14:39:18 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： We demonstrate the novel operation of a Si/Ge-based avalanche photodiode (APD) for the direct generation of ultra-wideband (UWB) frequency comb lines for impulse radio (IR) wireless communication. By applying a dc bias (V bias ) over the breakdown voltage (V br ) of the APD, the device can exhibit a significant resonant frequency without any optical signal illumination, and function as an impact ionization avalanche transit time diode-based oscillator. Under an additional electrical intermediate frequency (IF) injection, several frequency comb lines, with a spacing equal to the IF frequency, can be derived from the second harmonic of the oscillating frequency. By mixing the output pulse train from the APD-based UWB generator with the data signal from another Si/Ge APD (on the same chip) operated in the linear mode (V bias <; V br ), which can perform high-sensitivity optical data detection, error-free IR wireless-linking with data rate as high as 3.0 Gbit/s has been successfully achieved. 其他題名： LPT 出版者： IEEE 出版日期： 2012-06-15 出處： IEEE photonics technology letters, 2012-06, Vol.24 (12), p.1069-1071 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2195304 識別號： CODEN: IPTLEL
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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