Silicon photodetectors with triple p-n junctions in CMOS technology at 650-and 850-nm wavelengths

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Title:	Silicon photodetectors with triple p-n junctions in CMOS technology at 650-and 850-nm wavelengths
Authors:	辛裕明;Tsai, Y.-C.;Zhong, Y.-N.;Chou, F.-P.;Huang, C.-A.;Hsin, Y.-M.
Contributors:	資訊電機學院電機工程學系
Keywords:	Bias;buried layers;CMOS;CMOS integrated circuits;Electrodes;elemental semiconductors;floating electrode;FWHM values;HVPW‐NBL junction;n+‐buried layer‐p‐substrate junction;N+‐HVPW junction;n+‐implant‐p‐well junction;NBL‐P‐sub junction;P-n junctions;photoconductivity;photocurrents;Photodetectors;photodiodes;Photonics;pulse measurement;pulse response;p‐well‐n+‐buried layer junction;responsivity;reverse biasing;Silicon;silicon photodetectors;size 0.25 mum;standard CMOS process;triple p‐n junctions;wavelength 650 nm;wavelength 850 nm;Wavelengths;wavelength‐dependent response
Date:	2016-09-29
Issue Date:	2026-04-23 14:39:44 (UTC+8)
Publisher:	Institution of Engineering and Technology;The Institution of Engineering and Technology
Abstract:	摘要： A triple p–n junction Si photodetector using 0.25-μm standard CMOS process at 650- and 850-nm wavelengths is presented and investigated. Triple p–n junctions are formed vertically by n+-implant/p-well (N+/HVPW), p-well/n+-buried layer (HVPW/NBL), and n+-buried layer/p-substrate (NBL/P-sub) junctions to attain a wavelength-dependent response. The responsivity and pulse response were characterised in different bias schemes. Measured photocurrents from HVPW/NBL and NBL/P-sub junctions under reverse biasing and a floating electrode on N+-HVPW showed the smallest FWHM values. The −3 dB bandwidth of 1.9 GHz converted from pulse measurement is the highest result ever reported in 654-nm wavelength using standard CMOS technology. The proposed triple p–n junction Si photodetector with bias schemes shows combined excellent performance in 650- and 850-nm wavelengths. 出版者： The Institution of Engineering and Technology 出版日期： 2016-09-29 出處： Electronics letters, 2016-09, Vol.52 (20), p.1707-1708 資源來源： Wiley Online Library Open Access 版權： The Institution of Engineering and Technology 版權： 2020 The Institution of Engineering and Technology 識別號： ISSN: 0013-5194 識別號： ISSN: 1350-911X 識別號： EISSN: 1350-911X 識別號： DOI: 10.1049/el.2016.2260
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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