Single-crystalline δ-Ni2Si nanowires with excellent physical properties

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題名:	Single-crystalline δ-Ni2Si nanowires with excellent physical properties
作者:	辛正倫;Chiu, Wen-Li;Chiu, Chung-Hua;Chen, Jui-Yuan;Huang, Chun-Wei;Huang, Yu-Ting;Lu, Kuo-Chang;Hsin, Cheng-Lun;Yeh, Ping-Hung;Wu, Wen-Wei
貢獻者:	資訊電機學院電機工程學系
關鍵詞:	Chemistry and Materials Science;Materials Science;Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering
日期:	2013-01-01
上傳時間:	2026-04-23 14:40:11 (UTC+8)
出版者:	Springer New York;New York: Springer New York
摘要:	摘要： In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl 2 ·6H 2 O as a single-source precursor. Various morphologies of δ-Ni 2 Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni 2 Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation. 其他題名： Nanoscale Res Lett 出版者： New York: Springer New York 出版日期： 2013-06-19 出處： Nanoscale research letters, 2013-06, Vol.8 (1), p.290-290, Article 290 資源來源： ProQuest Open Access Content Collection 版權： Chiu et al.; licensee Springer. 2013. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 版權： Copyright ©2013 Chiu et al.; licensee Springer. 2013 Chiu et al.; licensee Springer. 識別號： ISSN: 1556-276X 識別號： ISSN: 1931-7573 識別號： EISSN: 1556-276X 識別號： DOI: 10.1186/1556-276X-8-290 識別號： PMID: 23782805
顯示於類別:	[電機工程學系] 期刊論文

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