Single-mode, high-speed, and high-power vertical-cavity surface-emitting lasers at 850 nm for short to medium reach (2 km) optical interconnects

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/108256

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Title:	Single-mode, high-speed, and high-power vertical-cavity surface-emitting lasers at 850 nm for short to medium reach (2 km) optical interconnects
Authors:	許晉瑋;Shi, Jin-Wei;Wei, Zhi-Rui;Chi, Kai-Lun;Jiang, Jia-Wei;Wun, Jhih-Min;Lu, I-Cheng;Chen, Jason;Yang, Ying-Jay
Contributors:	資訊電機學院電機工程學系
Keywords:	Apertures;Current measurement;Frequency measurement;High-speed optical techniques;Optical variables measurement;Performance evaluation;Semiconductor lasers;Vertical cavity surface emitting lasers;vertical-cavity surface-emitting lasers (VCSELs)
Date:	2013-12-15
Issue Date:	2026-04-23 14:40:34 (UTC+8)
Publisher:	IEEE
Abstract:	摘要： The vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (narrow linewidth) output power are essential to minimize chromatic dispersion and to further improve the bit-rate distance product in a multimode fiber, which has a significant propagation loss (~3.5 dB/km) at 850 nm wavelength. Here, we demonstrate the detailed design considerations and fabrication of a single-mode, high-power, and high-speed VCSELs at the 850 nm wavelength with oxide-relief and Zn-diffusion apertures for the application of short (0.3 km) to medium reach (2 km) optical interconnects. By optimizing the relative geometric sizes between two such apertures in our demonstrated 850-nm VCSELs, we can not only attain high single-mode output power (~6.5 mW), but also with a reasonable threshold current (<; 2.0 mA). Furthermore, the spatial hole burning effect induced low-frequency roll off can also be minimized in our optimized structure to obtain a maximum data rate up to 26 Gbit/s. The record-high bit rate-distance products for OM4 MMF transmission under ON-OFF keying (14 Gbit/s × 2.0 km) modulation formats have been successfully demonstrated by the use of our VCSEL. 其他題名： JLT 出版者： IEEE 出版日期： 2013-12-15 出處： Journal of Lightwave Technology, 2013-12, Vol.31 (24), p.4037-4044 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0733-8724 識別號： EISSN: 1558-2213 識別號： DOI: 10.1109/JLT.2013.2281235 識別號： CODEN: JLTEDG
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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