Stability and performance optimization of heterochannel monolithic 3-D SRAM cells considering interlayer coupling

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/108279

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108279

Title:	Stability and performance optimization of heterochannel monolithic 3-D SRAM cells considering interlayer coupling
Authors:	胡璧合;Fan, Ming-Long;Hu, Vita Pi-Ho;Chen, Yin-Nien;Su, Pin;Chuang, Ching-Te
Contributors:	資訊電機學院電機工程學系
Keywords:	Couplings;Devices;Heterochannel MOSFETs;interlayer coupling;Interlayers;Inverters;Joining;Layout;monolithic 3-D integration;Optimization;Performance evaluation;Robustness;SRAM cells;Stability;Static random access memory;Three dimensional;Transistors
Date:	2014-10-01
Issue Date:	2026-04-23 14:41:44 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
Abstract:	摘要： This paper extensively evaluates the stability and performance of heterochannel 6T/8T SRAM cells integrated in monolithic 3-D scheme with interlayer coupling. Various bitcell layouts with different gate alignments of transistors from distinct layers are investigated. This paper indicates that stacking the NFET tier over the PFET tier results in larger design margins for cell robustness and performance. Furthermore, the partition of 3-D layout design among distinct layers shows profound impacts on the stability, standby leakage, and performance of monolithic 3-D SRAM cells. Compared with the Si-based cells, the use of heterochannel devices increases the improvements of monolithic 3-D design over the 2-D counterparts and emerges as a suitable candidate for future monolithic 3-D IC applications. 其他題名： TED 出版者： New York: IEEE 出版日期： 2014-10 出處： IEEE Transactions on Electron Devices, 2014-10, Vol.61 (10), p.3448-3455 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2014 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2014.2348856 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	17	View/Open

社群 sharing

Loading...