中大學術數位典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/108282
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 94201/94201 (100%)
Visitors : 81558069      Online Users : 3293
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108282


    Title: The stability of aluminium oxide monolayer and its interface with two-dimensional materials
    Authors: 森馬丁;Song, Ting Ting;Yang, Ming;Chai, Jian Wei;Callsen, Martin;Zhou, Jun;Yang, Tong;Zhang, Zheng;Pan, Ji Sheng;Chi, Dong Zhi;Feng, Yuan Ping;Wang, Shi Jie
    Contributors: 理學院物理學系
    Keywords: 639/301/357/1018;639/766/119/544;639/925/357/995;Aluminum;Dielectric properties;Electrical properties;Graphene;Humanities and Social Sciences;multidisciplinary;Principles;Science;Simulation
    Date: 2016-07-06
    Issue Date: 2026-04-23 14:41:45 (UTC+8)
    Publisher: Nature Publishing Group;London: Nature Publishing Group UK
    Abstract: 摘要: The miniaturization of future electronic devices requires the knowledge of interfacial properties between two-dimensional channel materials and high- κ dielectrics in the limit of one atomic layer thickness. In this report, by combining particle-swarm optimization method with first-principles calculations, we present a detailed study of structural, electronic, mechanical, and dielectric properties of Al 2 O 3 monolayer. We predict that planar Al 2 O 3 monolayer is globally stable with a direct band gap of 5.99 eV and thermal stability up to 1100 K. The stability of this high- κ oxide monolayer can be enhanced by substrates such as graphene, for which the interfacial interaction is found to be weak. The band offsets between the Al 2 O 3 monolayer and graphene are large enough for electronic applications. Our results not only predict a stable high- κ oxide monolayer, but also improve the understanding of interfacial properties between a high- κ dielectric monolayer and two-dimensional material.
    其他題名: Sci Rep
    出版者: London: Nature Publishing Group UK
    出版日期: 2016-07-06
    出處: Scientific reports, 2016-07, Vol.6 (1), p.29221, Article 29221
    資源來源: Springer Nature Link
    版權: The Author(s) 2016
    版權: Copyright Nature Publishing Group Jul 2016
    版權: Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited
    識別號: ISSN: 2045-2322
    識別號: EISSN: 2045-2322
    識別號: DOI: 10.1038/srep29221
    識別號: PMID: 27381580
    Appears in Collections:[Department of Physics] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML15View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明