Structural and carrier dynamics of GaN and AlGaN-based double heterostructures in the UV region

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Title:	Structural and carrier dynamics of GaN and AlGaN-based double heterostructures in the UV region
Authors:	駱佳納;Arivazhagan, Ponnusamy;Ramesh, Raju;Jayasakthi, Mathaiyan;Loganathan, Ravi;Balaji, Manavaimaran;Baskar, Krishnan
Contributors:	資訊電機學院電機工程學系
Keywords:	Aluminum;Characterization and Evaluation of Materials;Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.);Chemistry and Materials Science;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Defects and impurities: doping, implantation, distribution, concentration, etc;Density;Electronics and Microelectronics;Exact sciences and technology;Instrumentation;Materials Science;Methods of deposition of films and coatings;film growth and epitaxy;Optical and Electronic Materials;Other semiconductors;Physics;Solid State Physics;Specific materials;Structure of solids and liquids;crystallography;Structure of specific crystalline solids;Surfaces and interfaces;thin films and whiskers (structure and nonelectronic properties);Thickness measurement;Thin film structure and morphology;Ultraviolet radiation
Date:	2013-08-01
Issue Date:	2026-04-23 14:42:13 (UTC+8)
Publisher:	Springer New York;Boston: Springer US
Abstract:	摘要： Aluminum gallium nitride-based double heterostructures with two different active layer widths have been grown on GaN templates by metalorganic chemical vapor deposition. Crystalline quality has been investigated using high-resolution x-ray diffraction analysis, and screw, edge, as well as total dislocation densities in the GaN epilayer have been calculated. The dislocation density of GaN has been found to be on the order of 10 8 cm −2 . The nominal Al composition and in-plane strain ε xx for the AlGaN layer grown on the GaN layer have been measured by asymmetric reciprocal-space mapping. Surface properties and cross-sectional views of the samples have been analyzed using atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), respectively. Room-temperature time-resolved photoluminescence and photoluminescence measurements have been performed on Al 0.18 Ga 0.82 N/Al 0.45 Ga 0.55 N double heterostructures and the GaN template. The interface recombination velocity ( S ) of AlGaN-based double heterostructures has been calculated using carrier decay time measurement, increasing from 8.7 × 10 3 cm/s to 13.4 × 10 3 cm/s with varying active layer thickness. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2013-08-01 出處： Journal of electronic materials, 2013-08, Vol.42 (8), p.2486-2491 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2013 版權： 2014 INIST-CNRS 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-013-2632-x 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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