Institute of Electrical and Electronics Engineers Inc.
摘要:
摘要： We reported the study of the growth mechanism of the In 2 O 3 nanorods on the silicon oxide substrate and its electrical and optical properties. Both of the vapor-liquid-solid and vapor-solid (VS) mechanism occurred concurrently during the growth of In 2 O 3 nanorods. The catalyst on the top of the nanorod is evident for the VLS mechanism. Meanwhile, the diameter of the nanorod mismatched the size of the catalyst and transmission electron microscopy study revealed that the sidewall of the nanorod was rough at the atomic scale during the growth, which is evident for the VS mechanism. The In 2 O 3 nanorods became faceted eventually with a pyramidal tip, composed of {1 0 0} and {1 1 1} facets with lower total surface energy at the growth temperature. The electrical measurement presents the conductivity and the estimated carrier concentration, while the photoluminescence exhibits the optical characteristics. This study provides the insight for the understanding of the growth mechanism and physical properties of the In 2 O 3 nanostructures. 出版日期： 2014-03-01 出處： IEEE transactions on nanotechnology, 2014-03, Vol.13 (2), p.172-175 資源來源： IEEE Electronic Library (IEL) Journals 識別號： ISSN: 1536-125X 識別號： EISSN: 1941-0085 識別號： DOI: 10.1109/TNANO.2014.2304963
