Thermal instability of pseudomorphically strained phosphorus doped Si:C alloy

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108306

Title:	Thermal instability of pseudomorphically strained phosphorus doped Si:C alloy
Authors:	溫偉源;Woon, Wei-Yen;Chuang, Yao-Teng;Wang, Sheng-Hao
Contributors:	理學院物理學系
Keywords:	Annealing;Beam interactions;Diffractometers;Interstitials;Oxides;Si:C;Solid phase epitaxial regrowth;Strain;Strain relaxation;Thermal instability;Thermal stability
Date:	2012-07-01
Issue Date:	2026-04-23 14:42:57 (UTC+8)
Publisher:	Elsevier;Elsevier B.V
Abstract:	摘要： We study the thermal stability of P doped and undoped pseudomorphically strained Si:C alloy formed by high fluence ion implantation and subsequent solid phase epitaxial regrowth (SPER), under post-annealing conditions far below the β-SiC precipitation threshold. The strain is measured by high resolution X-ray diffractometer (HRXRD) and kinematic simulation. By plotting the differential strain relaxation with respect to post-annealing time, we found much lower deactivation energy at the near surface region while the presence of high P concentration results in more significant strain relaxation. We explain the near surface relaxation by considering the interstitials injection by surface oxide formations during the post annealing process. P in the bulk on the other hand plays the role as additional interstitial kick-out mediator and lowers the thermal stability. 出版者： Elsevier B.V 出版日期： 2012-07-01 出處： Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-07, Vol.282, p.85-87 版權： 2011 Elsevier B.V. 識別號： ISSN: 0168-583X 識別號： EISSN: 1872-9584 識別號： DOI: 10.1016/j.nimb.2011.08.045
Appears in Collections:	[Department of Physics] journal & Dissertation

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