Surface passivation dependent photoluminescence from silicon quantum dot phosphors

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108331

Title:	Surface passivation dependent photoluminescence from silicon quantum dot phosphors
Authors:	杜長慶;Tu, Chang-Ching;Hoo, Ji-Hao;Böhringer, Karl F.;Lin, Lih Y.;Cao, Guozhong
Contributors:	資訊電機學院電機工程學系
Keywords:	Illumination;Passivation;Phosphors;Photoluminescence;Quantum confinement;Quantum dots;Silicon;Wavelengths
Date:	2012-11-15
Issue Date:	2026-04-23 14:43:28 (UTC+8)
Publisher:	The Optical Society;United States
Abstract:	摘要： We demonstrate wavelength-tunable, air-stable and nontoxic phosphor materials based on silicon quantum dots (SiQDs). The phosphors, which are composed of micrometer-size silicon particles with attached SiQDs, are synthesized by an electrochemical etching method under ambient conditions. The photoluminescence (PL) peak wavelength can be controlled by the SiQD size due to quantum confinement effect, as well as the surface passivation chemistry of SiQDs. The red-emitting phosphors have PL quantum yield equal to 17%. The SiQD-phosphors can be embedded in polymers and efficiently excited by 405 nm light-emitting diodes for potential general lighting applications. 其他題名： Opt Lett 出版者： United States 出版日期： 2012-11-15 出處： Optics letters, 2012-11, Vol.37 (22), p.4771-4773 資源來源： Optica Journals (NTUSG) 識別號： ISSN: 0146-9592 識別號： ISSN: 1539-4794 識別號： EISSN: 1539-4794 識別號： DOI: 10.1364/OL.37.004771 識別號： PMID: 23164908
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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