Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study

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Title:	Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study
Authors:	綦振瀛;Chu, Rei-Lin;Hsueh, Wei-Jen;Chiang, Tsung-Hung;Lee, Wei-Chin;Lin, Hsiao-Yu;Lin, Tsung-Da;Brown, Gail J.;Chyi, Jen-Inn;Huang, Tsung-Shiew;Pi, Tun-Wen;Kwo, J. Raynien;Hong, Minghwei
Contributors:	資訊電機學院電機工程學系
Date:	2013-12-01
Issue Date:	2026-04-23 14:43:33 (UTC+8)
Publisher:	Japan Society of Applied Physics
Abstract:	出版日期： 2013-12-01 出處： Applied physics express, 2013-12, Vol.6 (12), p.121201 資源來源： IOP Journals 識別號： ISSN: 1882-0778 識別號： EISSN: 1882-0786 識別號： DOI: 10.7567/APEX.6.121201
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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