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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/108339


    題名: Surface plasmon coupled light-emitting diode: Experimental and numerical studies
    作者: 姚毓峰;Kuo, Yang;Lin, Chun-Han;Chen, Horng-Shyang;Hsieh, Chieh;Tu, Charng-Gan;Shih, Pei-Ying;Chen, Chung-Hui;Liao, Che-Hao;Su, Chia-Ying;Yao, Yu-Feng;Chen, Hao-Tsung;Kiang, Yean-Woei;Yang, Chih-Chung
    貢獻者: 資訊電機學院電機工程學系
    關鍵詞: Algorithms;Dipoles;Gallium nitrides;Indium gallium nitrides;Joining;Light-emitting diodes;Plasmons;Quantum wells
    日期: 2015-02-01
    上傳時間: 2026-04-23 14:43:59 (UTC+8)
    出版者: Japan Society of Applied Physics;The Japan Society of Applied Physics
    摘要: 摘要: First, the experimental implementations and theoretical/numerical investigations of surface plasmon (SP) coupled InGaN/GaN quantum-well light-emitting diodes (LEDs) are reviewed. If the p-GaN layer in an LED can be thin, surface metal nanoparticle (NP) is an inexpensive structure for inducing effective SP coupling. When the p-GaN layer is thick, a few metal structures, including metal protrusion, buried metal NP, and embedded metal NP, can be used for effective SP coupling. In the numerical study, an algorithm, including the feedback effect of the induced SP resonance on the radiating behavior of the source dipole, has been proposed for studying the SP coupling effects with an embedded metal NP, a surface metal NP, and a metal protrusion. Then, the theoretical formulations and numerical algorithms for evaluating the radiated power enhancement in the coupling process between two radiating dipoles and the localized surface plasmon (LSP) induced on a nearby Ag NP are built. Three mechanisms are considered in the coupling process for radiated power enhancement, including the interference of the two phase-retarded radiation contributions from the two dipoles, the interaction between the two dipoles, and the LSP resonant coupling.
    其他題名: Jpn. J. Appl. Phys
    出版者: The Japan Society of Applied Physics
    出版日期: 2015-02-01
    出處: Japanese Journal of Applied Physics, 2015-02, Vol.54 (2S), p.2-1-02BD01-10
    資源來源: Institute of Physics Journals
    版權: 2015 The Japan Society of Applied Physics
    識別號: ISSN: 0021-4922
    識別號: EISSN: 1347-4065
    識別號: DOI: 10.7567/JJAP.54.02BD01
    識別號: CODEN: JJAPB6
    顯示於類別:[電機工程學系] 期刊論文

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