Nature Publishing Group;London: Springer Science and Business Media LLC
摘要:
摘要： Organic-metal interfaces are key elements in organic-based electronics. The energy-level alignment between the metal Fermi level and the molecular orbital levels determines the injection barriers for the charge carriers at the interfaces, which are crucial for the performance of organic electronic devices. Dipole formation at the interfaces has been regarded as the main factor that affects the energy-level alignment. Several models have been proposed for the mechanism of dipole formation in the context of the interface between organic molecules and a bulk metal crystal surface, at which surface states were mostly used to probe the interfacial properties. Here we report that when the bulk metal crystal is replaced by a uniform metal thin film, the resulting two-dimensional quantum-well states will be able to not only probe but also modify the interfacial electronic structures, such as gap states, that have no counterpart at the organic-bulk crystal interface. 其他題名： Nat Commun 出版者： London: Springer Science and Business Media LLC 出版日期： 2013-12-11 出處： Nature Communications, 2013-12, Vol.4 (1), p.2925-, Article 2925 資源來源： ProQuest Open Access Content Collection 版權： Springer Nature Limited 2013 版權： Copyright Nature Publishing Group Dec 2013 識別號： ISSN: 2041-1723 識別號： EISSN: 2041-1723 識別號： DOI: 10.1038/ncomms3925 識別號： PMID: 24326296
