Temperature-dependent decay dynamics in highly mismatched ZnSe 1-xTe x alloy

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Title:	Temperature-dependent decay dynamics in highly mismatched ZnSe 1-xTe x alloy
Authors:	綦振瀛;Lin, Yan-Cheng;Jiang, Wei-Shi;Chou, Wu-Ching;Chen, Wei-Kuo;Chang, Wen-Hao;Chia, Chin-Hau;Chen, Cheng-Yu;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Date:	2012-02-13
Issue Date:	2026-04-23 14:46:03 (UTC+8)
Publisher:	American Institute of Physics
Abstract:	摘要： This study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe0.950Te0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10–300 K), indicating strong carrier localization. Kohlrausch’s stretched exponential law, in which the deduced stretching exponent β is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime τ initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons. 出版日期： 2012-02-13 出處： Applied physics letters, 2012-02, Vol.100 (7) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.3687187
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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