The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

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Title:	The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors
Authors:	綦振瀛;Liao, W. C.;Chen, Y. L.;Chen, C. H.;Chyi, J. I.;Hsin, Y. M.
Contributors:	資訊電機學院電機工程學系
Keywords:	ALUMINIUM COMPOUNDS;Aluminum gallium nitrides;Applied physics;Buffer layers;COMPUTERIZED SIMULATION;CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;ELECTRIC POTENTIAL;ELECTRONS;FIELD EFFECT TRANSISTORS;GALLIUM NITRIDES;HETEROJUNCTIONS;Heterostructures;INTERFACES;LAYERS;Semiconductor devices;STRESSES;Threshold voltage;TRAPPING
Date:	2014-01-20
Issue Date:	2026-04-23 14:46:23 (UTC+8)
Publisher:	American Institute of Physics;Melville: AIP Publishing
Abstract:	摘要： A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (VDS) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high VDS off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (EC – 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed. 出版者： Melville: AIP Publishing 出版日期： 2014-01-20 出處： Applied Physics Letters, 2014-01, Vol.104 (3) 資源來源： AIP Publishing 版權： 2014 AIP Publishing LLC. 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4862669
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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