The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108398

Title:	The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors
Authors:	綦振瀛;Chiu, Hsien-Chin;Lin, Wen-Yu;Hsueh, W.J.;Chiu, Pei-Chin;Hsin, Yue-Ming;Chyi, Jen-Inn
Contributors:	資訊電機學院電機工程學系
Keywords:	AlSb/InAs;Hot carrier stress;Iridium;Reliability
Date:	2015-01-01
Issue Date:	2026-04-23 14:46:40 (UTC+8)
Publisher:	Elsevier Ltd.;Elsevier Ltd
Abstract:	摘要： •The InAs/AlSb HEMT using refractory iridium (Ir) gate technology was proposed.•The Ir-gate exhibited a superior metal work function for increasing ΦB of InAs/AlSb heterostructures to 0.58eV.•The Ir-gate HEMT show higher threshold voltage and lower gate current.•The Ir-gated HEMT also shows stability improvement of DC characteristics under hot carrier stress. In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated. 出版者： Elsevier Ltd 出版日期： 2015-05-01 出處： Microelectronics and reliability, 2015-05, Vol.55 (6), p.890-893 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2015 Elsevier Ltd 識別號： ISSN: 0026-2714 識別號： EISSN: 1872-941X 識別號： DOI: 10.1016/j.microrel.2015.03.016
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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