摘要： Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias voltage (on the sample) below 2.0V, STM topography images of the alumina layer beneath the surface were obtained. A probe with depth of 2–8Å was readily attained. The under-surface observation shows that the film consists of stacked layers of alumina whereas the layered alumina unnecessarily comprises entire θ-Al2O3 unit cells. The lattice orientation of the upper alumina layer differs from that of the lower one by 90° — the newly grown oxide structurally matching the horizontal oxide rather than the lower oxide. The results indicate a growth process competing with the typical mode of epitaxial growth for the growth of alumina film. ► STM images of alumina layers beneath the surface of alumina film/NiAl(100) obtained. ► A probe depth of 0.2–0.8nm is readily attained. ► The orientation of upper layer of alumina may differ from that of lower ones by 90°. 出版者： Elsevier B.V 出版日期： 2012-03-30 出處： Thin solid films, 2012-03, Vol.520 (11), p.3952-3959 版權： 2012 Elsevier B.V. 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2012.01.011
