摘要： An effect, called random trap fluctuation (RTF), is proposed to study the threshold voltage (Vth) fluctuation of metal oxide semiconductor field effect transistors (MOSFETs) under Fowler-Nordeim (FN) or hot carrier (HC) stress condition. Experiments have been demonstrated on n-channel MOSFETs, and it was found that not only the random dopant fluctuation (RDF) but also the stress-induced traps vary the Vth fluctuation. More importantly, the stress-induced trap barrier determines the Vth fluctuation. For devices after FN stress, Vth fluctuation is enhanced since the trap barrier regulates the transporting carriers. For devices after HC stress, Vth fluctuation is supressed since the carriers are backscattered into the channel by the trap barrier and fewer carriers with higher energy pass through the barrier. These results provide us a clear understanding on another source of Vth fluctuations in addition to the RDF as devices are further scaled. 出版者： AIP Publishing 出版日期： 2012-11-26 出處： Applied Physics Letters, 2012-11, Vol.101 (22) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4768687
