The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

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题名:	The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement
作者:	謝易叡;Hsieh, E. R.;Chung, Steve S.
贡献者:	資訊電機學院電機工程學系
关键词:	Applied physics;Current leakage;Evolution;Field effect transistors;Gates;Metal oxides;Noise measurement;Percolation;Semiconductor devices;Stability;Transistors
日期:	2015-12-14
上传时间:	2026-04-23 14:47:33 (UTC+8)
出版者:	American Institute of Physics;Melville: American Institute of Physics
摘要:	摘要： The evolution of gate-current leakage path has been observed and depicted by RTN signals on metal-oxide-silicon field effect transistor with high-k gate dielectric. An experimental method based on gate-current random telegraph noise (Ig-RTN) technique was developed to observe the formation of gate-leakage path for the device under certain electrical stress, such as Bias Temperature Instability. The results show that the evolution of gate-current path consists of three stages. In the beginning, only direct-tunnelling gate current and discrete traps inducing Ig-RTN are observed; in the middle stage, interaction between traps and the percolation paths presents a multi-level gate-current variation, and finally two different patterns of the hard or soft breakdown path can be identified. These observations provide us a better understanding of the gate-leakage and its impact on the device reliability. 出版者： Melville: American Institute of Physics 出版日期： 2015-12-14 出處： Applied physics letters, 2015-12, Vol.107 (24) 資源來源： AIP Publishing 版權： 2015 AIP Publishing LLC. 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4938142
显示于类别:	[電機工程學系] 期刊論文

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