SPIE;Society of Photo-Optical Instrumentation Engineers
摘要:
摘要： Ge gate-all-around fin field-effect transistors (Ge FinFETs) with a capacitive effective thickness of a few nanometers have been successfully achieved via atomic-layer-deposited (ALD) high-dielectric Al2O3 on GeO2/Ge and by adopting low-cost thermo ALD equipment. The MOS interface properties of the ZrO2 or Al2O3/GeO2/Ge structures have been studied systematically. It has been found that a GeO2 interfacial layer that is greater than approximately 2.5 nm results in a significant degradation of the MOS interfaces, while an equivalent oxide thickness of <3 nm is still possible while maintaining good GeO2/Ge interface quality. The Ge FinFET's value has been demonstrated with the Al2O3/GeO2/Ge gate stack prepared using a thermal ALD layer of Al2O3. The experimental results indicate that the MOS interface quality obtained with the technique developed for high-permittivity/Ge gate stacks is also extremely useful for the fabrication of triangle-fin complementary metal oxide semiconductor devices. An Ion/Ioff ratio of 3.2×104 and a subthreshold swing of 103 mV/dec were obtained for the triangular n-type Ge gate-all-around FET with (111) sidewalls. The drain current at VGS−VT=VDS=−1.5 V is 88 mA/mm. 其他題名： J. Micro/Nanolith. MEMS MOEMS 出版者： Society of Photo-Optical Instrumentation Engineers 出版日期： 2015-10-01 出處： Journal of micro/nanolithography, MEMS, and MOEMS, 2015-10, Vol.14 (4), p.044501-044501 版權： 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 識別號： ISSN: 1932-5150 識別號： EISSN: 1932-5134 識別號： DOI: 10.1117/1.JMM.14.4.044501
