Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： To identify the individually optimized thermal annealing conditions for reducing the contact resistivity between highly Ga-doped ZnO (GaZnO) and doped-GaN and for improving the electrical and optical properties of GaZnO, the results of the one-step and two-step growth/annealing processes of GaZnO at various growth and thermal annealing temperatures are compared. The one-step (two-step) process corresponds to the condition of thermal annealing for the whole GaZnO layer (only for a 10-nm GaZnO layer of the first-step growth). The two-step process always results in lower contact resistivity on either p-GaN or n-GaN at any annealing temperature. Lateral and vertical light-emitting diodes (LEDs) with GaZnO layers on the top are fabricated to show that the LED samples with the two-step process have the lower device resistance levels, higher emission efficiencies, and weaker efficiency droop effects, when compared with those with the one-step process. In the lateral LED sample with the two-step process, the combination of the effective atomic interdiffusion at the GaZnO/p-GaN junction under the optimized annealing condition and the preservation of the superior electrical property in the major GaZnO layer without annealing leads to its better performance, when compared with that of the lateral LED sample with the one-step process. 其他題名： TED 出版者： New York: IEEE 出版日期： 2015-11-01 出處： IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3742-3749 資源來源： IEL(IEEE/IET Electronic Library ) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Nov 2015 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2015.2479637 識別號： CODEN: IETDAI
