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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/108438


    題名: Thermoelectric properties of a quantum dot array connected to metallic electrodes
    作者: 郭明庭;Kuo, David M-T;Chang, Yia-Chung
    貢獻者: 資訊電機學院電機工程學系
    關鍵詞: Applied sciences;Arrays;Cross-disciplinary physics: materials science;rheology;Electrodes;Electronics;Energy levels;Exact sciences and technology;Fermi surfaces;Fluctuation;Materials science;Molecular electronics, nanoelectronics;Nanocrystalline materials;Nanoscale materials and structures: fabrication and characterization;Nanostructure;Physics;Quantum dots;Quantum wires;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Thermoelectricity
    日期: 2013-05-03
    上傳時間: 2026-04-23 14:48:54 (UTC+8)
    出版者: IOP Publishing Ltd.;Bristol: IOP Publishing
    摘要: 摘要: The thermoelectric properties of a quantum dot array (QDA) embedded in a nanowire connected to metallic electrodes are investigated theoretically via the extended Hubbard model in the Coulomb blockade regime. Coupled quantum dots (QDs) with dot number N = 2-5 are considered. It is found that the thermoelectric properties converge to almost the same results when N approaches 5, indicating that our results are applicable for a QDA with a large number of QDs. Our studies indicate that in order to achieve the optimal figure of merit (ZT), it is preferable to have the QD energy levels above the Fermi energy (EF) of the electrodes of the QDA junction. The effects of QD energy level and interdot coupling variations (due to the QD size and position fluctuation) on the thermoelectric properties are also examined. We find that the QD size fluctuation significantly suppresses the maximum ZT in the weak interdot hopping strength (t ,j). We also find that the Seebeck coefficient is insensitive to t ,j and the tunneling rates when the QD energy levels are far above EF. For a given t ,j and large on-site Coulomb interactions, increasing the QD number N in the QDA would suppress the maximum ZT value. It is possible to achieve an optimal ZT larger than 3 by tailoring the physical parameters of the QDA junction system.
    其他題名: Nano
    其他題名: Nanotechnology
    出版者: Bristol: IOP Publishing
    出版日期: 2013-05-03
    出處: Nanotechnology, 2013-05, Vol.24 (17), p.175403-1-7
    資源來源: Institute of Physics Journals
    版權: 2013 IOP Publishing Ltd
    版權: 2014 INIST-CNRS
    識別號: ISSN: 0957-4484
    識別號: ISSN: 1361-6528
    識別號: EISSN: 1361-6528
    識別號: DOI: 10.1088/0957-4484/24/17/175403
    識別號: PMID: 23558456
    識別號: CODEN: NNOTER
    顯示於類別:[電機工程學系] 期刊論文

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