摘要： Characterizations of photoresponse of a graphene oxide (GO) thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films. 出版者： AIP Publishing LLC 出版日期： 2012-06 出處： AIP advances, 2012-06, Vol.2 (2), p.022104-022104-9 資源來源： DOAJ Directory of Open Access Journals 版權： Author(s) 識別號： ISSN: 2158-3226 識別號： EISSN: 2158-3226 識別號： DOI: 10.1063/1.3702871 識別號： CODEN: AAIDBI
