Transient dual-energy lasing in a semiconductor microcavity

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/108477

Title:	Transient dual-energy lasing in a semiconductor microcavity
Authors:	李依珊;Hsu, Feng-Kuo;Xie, Wei;Lee, Yi-Shan;Lin, Sheng-Di;Lai, Chih Wei
Contributors:	資訊電機學院電機工程學系
Keywords:	140/125;639/624/1020/1093;639/766/119/1000/1018;639/766/400/482;Energy;Humanities and Social Sciences;Lasers;multidisciplinary;Polarization;Quantum dots;Radiation;Science;Spectrum analysis;Temperature effects
Date:	2015-10-19
Issue Date:	2026-04-23 14:51:04 (UTC+8)
Publisher:	Nature Publishing Group;London: Nature Publishing Group UK
Abstract:	摘要： We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20–50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance. 其他題名： Sci Rep 出版者： London: Nature Publishing Group UK 出版日期： 2015-10-19 出處： Scientific reports, 2015-10, Vol.5 (1), p.15347, Article 15347 資源來源： SpringerLink Open Access Journals 版權： The Author(s) 2015 版權： Copyright Nature Publishing Group Oct 2015 版權： Copyright © 2015, Macmillan Publishers Limited 2015 Macmillan Publishers Limited 識別號： ISSN: 2045-2322 識別號： EISSN: 2045-2322 識別號： DOI: 10.1038/srep15347 識別號： PMID: 26477277
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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