Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates

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Title:	Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates
Authors:	辛裕明;Liao, Wen-Chia;Chyi, Jen-Inn;Hsin, Yue-Ming
Contributors:	資訊電機學院電機工程學系
Keywords:	AlGaN/GaN heterostructure field-effect transistors (HFETs);Aluminum gallium nitride;Charge carrier processes;current collapse;Gallium nitride;HEMTs;Logic gates;MODFETs;Stress measurement;transient capacitance-voltage (C-V) measurement
Date:	2015-01-01
Issue Date:	2026-04-23 14:51:10 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced. 其他題名： TED 出版者： IEEE 出版日期： 2015-03-01 出處： IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.835-839 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2015.2395720 識別號： CODEN: IETDAI
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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