Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced. 其他題名： TED 出版者： IEEE 出版日期： 2015-03-01 出處： IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.835-839 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0018-9383 識別號： EISSN: 1557-9646 識別號： DOI: 10.1109/TED.2015.2395720 識別號： CODEN: IETDAI
