Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:
摘要： This paper investigates the impact of intrinsic random variability on the robustness of sense amplifier (SA) for fin-shaped field-effect transistor (FinFET) subthreshold static random access memory (SRAM) applications. We employ a model-assisted statistical approach to consider both fin line edge roughness (fin LER) and work function variation, which are regarded as the major variation sources in an advanced FinFET device. Our results indicate that fin LER dominates the overall variability of subthreshold SA robustness and sensing margin. In addition, it is observed that the offset voltage (V OS ) of current latch SA calculated solely from threshold voltage (V T ) mismatch underestimates the actual variation and is shown to be optimistic. For large-signal single-ended inverter sensing, we find that sense "0" hinders the allowable sensing margin and needs to be carefully designed. Compared with bulk CMOS, the superior electrostatic integrity and variability of FinFET enhance the feasibility of differential sensing in subthreshold SRAM applications. 其他題名： TCSII 出版者： New York: IEEE 出版日期： 2012-12-01 出處： IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.878-882 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2012 識別號： ISSN: 1549-7747 識別號： EISSN: 1558-3791 識別號： DOI: 10.1109/TCSII.2012.2231016 識別號： CODEN: ICSPE5
