Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n + -ZnO capping layer grown with molecular beam epitaxy and the p-GaN layer grown with metalorganic chemical vapor deposition, is fabricated and characterized. Its performances are compared with those of a lateral LED based on the same epitaxial structure to show the significantly lower device resistance, smaller leakage current, weaker output intensity saturation, relatively lower defect emission, and stronger emissions from the p-GaN and n-ZnO layers in the VLED. 其他題名： LPT 出版者： IEEE 出版日期： 2013-02-01 出處： IEEE photonics technology letters, 2013-02, Vol.25 (3), p.317-319 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2236085 識別號： CODEN: IPTLEL
