In-situ method for TSV delay testing and characterization using input sensitivity analysis

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Title:	In-situ method for TSV delay testing and characterization using input sensitivity analysis
Authors:	鄭政誠;You, Jhih-Wei;Huang, Shi-Yu;Lin, Yu-Hsiang;Tsai, Meng-Hsiu;Kwai, Ding-Ming;Chou, Yung-Fa;Wu, Cheng-Wen
Contributors:	文學院歷史研究所
Keywords:	3-D IC;Applied sciences;Architecture;Capacitance;Circuit properties;Delay;Delay characterization;design-for-testability;Design. Technologies. Operation analysis. Testing;Digital circuits;Electric, optical and optoelectronic circuits;Electronic circuits;Electronics;Equivalence;Exact sciences and technology;Integrated circuit modeling;Integrated circuits;Logic gates;oscillation ring;Oscillations;Oscillators;Propagation;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Sensitivity analysis;Studies;Testing, measurement, noise and reliability;Three dimensional;through-silicon via (TSV);Through-silicon vias;Very large scale integration
Date:	2013-01-01
Issue Date:	2026-04-23 14:53:20 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
Abstract:	摘要： In this paper, we propose a method and the required architecture for characterizing the propagation delays of the through Silicon vias (TSVs) in a 3-D IC. First of all, every two TSVs are paired up to form an oscillation ring with some peripheral circuits. Their joint performance can thus be measured roughly by the oscillation period of the ring. Next, we utilize a technique called sensitivity analysis to further derive the propagation delay of each individual TSV participating in an oscillation ring-a distilling process. In this process, we perturb the strength of the two TSV drivers, and then measure their effects in terms of the change of the oscillation ring's period. By some following analysis, the propagation delay of each TSV can be revealed. On top of scheme, we also present an architecture that can activate the performance characterization process of each test unit - that consists of two TSVs - one at a time in a proper sequence. The area overhead is only 18.97 equivalent two-input NAND gate per TSV, by which one can gain the ability to profile the capacitances and the propagation delays of the TSVs on a 3-D IC. 其他題名： TVLSI 出版者： New York, NY: IEEE 出版日期： 2013-03-01 出處： IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2013-03, Vol.21 (3), p.443-453 資源來源： IEEE Xplore DIgital Library 版權： 2014 INIST-CNRS 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2013 識別號： ISSN: 1063-8210 識別號： EISSN: 1557-9999 識別號： DOI: 10.1109/TVLSI.2012.2187543 識別號： CODEN: IEVSE9
Appears in Collections:	[Graduate Institute of History ] journal & Dissertation

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