Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

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Title:	Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
Authors:	綦振瀛;Fang, J. Y.;Lee, G. Y.;Chyi, J. I.;Hsu, C. P.;Kang, Y. W.;Fang, K. C.;Kao, W. L.;Yao, D. J.;Hsu, C. H.;Huang, Y. F.;Chen, C. C.;Li, S. S.;Yeh, J. A.;Ren, F.;Wang, Y. L.
Contributors:	資訊電機學院電機工程學系
Keywords:	Aluminum gallium nitrides;BROWNIAN MOVEMENT;Butanediol;BUTANEDIOLS;CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;Deionization;Dimethyl sulfoxide;DIPOLE MOMENTS;DIPOLES;DMSO;Drains;ELECTRIC CURRENTS;ELECTRIC POTENTIAL;ELECTRON MOBILITY;ETHANOL;Ethylene glycol;Fluctuation;FLUCTUATIONS;GALLIUM NITRIDES;Gates;GLYCEROL;High electron mobility transistors;Liquids;METALS;Semiconductor devices;TIME MEASUREMENT;TRANSISTORS;Variation;VISCOSITY
Date:	2013-11-28
Issue Date:	2026-04-23 14:53:28 (UTC+8)
Publisher:	American Institute of Physics;Melville: American Institute of Physics
Abstract:	摘要： The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity. 出版者： Melville: American Institute of Physics 出版日期： 2013-11-28 出處： Journal of applied physics, 2013-11, Vol.114 (20) 資源來源： AIP Journals (American Institute of Physics) 版權： 2013 AIP Publishing LLC. 識別號： ISSN: 0021-8979 識別號： EISSN: 1089-7550 識別號： DOI: 10.1063/1.4833552
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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