Void structures in regularly patterned Zno nanorods grown with the hydrothermal method

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Title:	Void structures in regularly patterned Zno nanorods grown with the hydrothermal method
Authors:	姚毓峰;Kiang, Yean-Woei;Yang, C. C.;Chang, Wen-Ming;Chen, Horng-Shyang;Su, Chia-Ying;Chou, Wang-Hsien;Shih, Pei-Ying;Chen, Wei-Fang;Shen, Chen-Hung;Yao, Yu-Feng;Liao, Che-Hao
Contributors:	資訊電機學院電機工程學系
Keywords:	Annealing;Aqueous solutions;Arrays;Chemical vapor deposition;Emission spectroscopy;Hydroxyl groups;Nanomaterials;Photovoltaic cells;Radioactivity;Solar energy;Thin films;Vacancies;Voids;Zinc oxide
Date:	2014-01-01
Issue Date:	2026-04-23 14:54:00 (UTC+8)
Publisher:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Limiteds
Abstract:	摘要： The void structures and related optical properties after thermal annealing with ambient oxygen in regularly patterned ZnO nanrorod (NR) arrays grown with the hydrothermal method are studied. In increasing the thermal annealing temperature, void distribution starts from the bottom and extends to the top of an NR in the vertical (c-axis) growth region. When the annealing temperature is higher than 400°C, void distribution spreads into the lateral (m-axis) growth region. Photoluminescence measurement shows that the ZnO band-edge emission, in contrast to defect emission in the yellow-red range, is the strongest under the n-ZnO NR process conditions of 0.003 M in Ga-doping concentration and 300°C in thermal annealing temperature with ambient oxygen. Energy dispersive X-ray spectroscopy data indicate that the concentration of hydroxyl groups in the vertical growth region is significantly higher than that in the lateral growth region. During thermal annealing, hydroxyl groups are desorbed from the NR leaving anion vacancies for reacting with cation vacancies to form voids. 出版者： Cairo, Egypt: Hindawi Limiteds 出版日期： 2014-01-01 出處： Journal of Nanomaterials, 2014-01, Vol.2014 (2014), p.305-315-437 資源來源： Chinese Electronic Periodical Services (CEPS)_2025 版權： Copyright © 2014 Yu-Feng Yao et al. 版權： Copyright © 2014 Yu-Feng Yao et al. Yu-Feng Yao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1687-4110 識別號： ISSN: 1687-4129 識別號： EISSN: 1687-4129 識別號： DOI: 10.1155/2014/756401
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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