摘要： This study has developed a new polishing pad and an accompanying group of parameters for polishing monocrystalline silicon. A hot melt adhesive polishing pad coated with SiC abrasive uses these parameters more effectively and provides better polishing quality when compared with a conventional wool pad. Three control parameters, feed rate, polishing load and turning speed of the polishing wheel, were tested to identify their impact on the polishing quality of the silicon surface. A silicon surface polished with the proposed new pad under optimum conditions can obtain surface roughness of 2.45 nm Ra with mirror-like appearance. 出版者： London, England: SAGE Publications 出版日期： 2012-01 出處： Proceedings of the Institution of Mechanical Engineers. Part B, Journal of engineering manufacture, 2012-01, Vol.226 (1), p.92-102 版權： IMechE 2012 版權： 2015 INIST-CNRS 版權： Copyright Professional Engineering Publishing Ltd Jan 2012 識別號： ISSN: 0954-4054 識別號： EISSN: 2041-2975 識別號： DOI: 10.1177/0954405410396130
